Delayed photocurrents were observed in GaAs/AlAs type‐I short‐period superlattices by measuring time‐resolved photoresponses under ultrashort optical pulse excitation. According to the envelope function calculations, theX1state in AlAs barriers resonates with the &Ggr;2state in the adjacent GaAs wells at a bias voltage where the delayed photocurrents were conspicuous. These results strongly suggest that the dynamic carrier transport process is significantly influenced byX1‐&Ggr;2resonance effects in the superlattices. ©1995 American Institute of Physics.