The gettering of ion implanted Au to defects in Si has been studied using Rutherford backscattering and channeling and transmission electron microscopy. Damage from a Si implant anneals into dislocations which can efficiently trap diffusing Au. The damage introduced by a H implant evolves during annealing into cavities which getter close to 100% of the Au, leaving very little Au in solution. This process is driven by the diffusion of a supersaturated solid solution of Au to a favorable sink. The internal surfaces of cavities are the most favorable sink, followed by dislocations and then the Si surface. ©1995 American Institute of Physics.