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cw Ar+laser annealing of optically active impurities in nitrogen‐implanted AlxGa1−xAs (x=0.58)

 

作者: Yunosuke Makita,   Masaki Yokota,   Hidetoshi Nojiri,   Toshio Tsurushima,   Hisao Tanoue,   Toshihiko Kanayama,   Jun‐ichi Shimada,  

 

期刊: Applied Physics Letters  （AIP Available online 1979）
卷期: Volume 35, issue 8  

页码: 633-636

 

ISSN:0003-6951

 

年代: 1979

 

DOI:10.1063/1.91233

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Laser annealing of nitrogen implanted AlxGa1−xAs was carried out by using an Ar+laser. A reliable and well‐controlled annealing was performed with threshold power density of the order of 105W/cm2. Photoluminescence (PL) characteristics show that laser annealing is superior to thermal annealing in terms of PL intensities and the absence of deep levels. New emission bands were obtained at the intermediate power density of the laser, which were never obtained in thermal annealing.

 

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