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Photon‐assisted dry etching of GaAs

 

作者: Peter Brewer,   Scott Halle,   R. M. Osgood,  

 

期刊: Applied Physics Letters  （AIP Available online 1984）
卷期: Volume 45, issue 4  

页码: 475-477

 

ISSN:0003-6951

 

年代: 1984

 

DOI:10.1063/1.95221

 

出版商: AIP

 

数据来源: AIP

 

摘要:

UV radiation from an ArF laser has been used to perform large‐area etching of single‐crystal GaAs. The process is based on photochemical production of methyl or trifluoromethyl, and bromine radicals. The etching is anisotropic and features <1 &mgr;m have been made.

 

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