A silicon single electron tunneling transistor (SETT), which shows an inverting voltage gain greater than unity and as high as 3.7, has been fabricated. The blockade voltage as a function of gate voltage shows sawtooth oscillations when biased with a small current and measured at a temperature of 4.2 K. The SETT is fabricated in highly doped and oxidized silicon quantum wires of less than a40 nm×50 nmcross section and 1.5 &mgr;m length. ©1997 American Institute of Physics.