GaAs metal‐semiconductor field‐effect transistors (MESFETs) with extremely low resistance nonalloyed ohmic contacts have been demonstrated. The contact structure consists of ann+‐InAs/GaAs strained‐layer superlattice and an InAs cap layer. Contact resistances as low as 0.036 &OHgr; mm have been measured. These results represent the smallest figures reported to date for GaAs field‐effect transistors. Nonalloyed MESFETs with 1 &mgr;m gate lengths had transconductances of about 210 mS/mm.