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Study of forwardI‐Vplot for Schottky diodes with high series resistance

 

作者: K. Sato,   Y. Yasumura,  

 

期刊: Journal of Applied Physics  （AIP Available online 1985）
卷期: Volume 58, issue 9  

页码: 3655-3657

 

ISSN:0021-8979

 

年代: 1985

 

DOI:10.1063/1.335750

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The current‐voltage characteristics for Schottky barrier diodes with series resistance are discussed. It is shown that by using Norde’s functionF(V)=V/2−(kT/q)ln(I/SAT2) at two different temperatures, barrier height,n‐value or ideality factor, and series resistance can be determined even in the case 1<n<2.

 

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