Nitrogen related doping with implant Si3N4formation in Si
作者:
D. Eirug Davies,
Joseph A. Adamski,
E. F. Kennedy,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 48,
issue 5
页码: 347-349
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.96547
出版商: AIP
数据来源: AIP
摘要:
A heavily conducting region has been observed on implanting nitrogen into silicon for forming a buried dielectric layer. The conduction predominantly occurs in the surface silicon layer adjacent to the higher nitrogen content isolating region. The doping, ≳1018cm−3and exceeding previously observed nitrogen related doping, is relatively stable at customary 1150–1200 °C processing temperatures and its elimination requires annealing ≳1300 °C.
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