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Photoluminescence properties of ZnSe single crystalline films grown by atomic layer epitaxy

 

作者: Takafumi Yao,   Toshihiko Takeda,   Ryuji Watanuki,  

 

期刊: Applied Physics Letters  （AIP Available online 1986）
卷期: Volume 48, issue 23  

页码: 1615-1616

 

ISSN:0003-6951

 

年代: 1986

 

DOI:10.1063/1.96834

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Atomic layer epitaxy has been employed to produce good‐quality ZnSe single crystalline films onto (100) oriented GaAs substrates. The epilayers grown at 280 °C exhibited smooth and featureless surface texture and excellent photoluminescence characteristics. They showed dominant excitonic emission lines and a very weak deep center emission band.

 

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