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Production and rearrangement of radiation defects in ion implanted semiconductors

 

作者: A.V. Dvurechensky,   L.S. Smirnov,  

 

期刊: Radiation Effects  （Taylor Available online 1978）
卷期: Volume 37, issue 3-4  

页码: 173-178

 

ISSN:0033-7579

 

年代: 1978

 

DOI:10.1080/00337577808233186

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

Mechanisms of the crystalline-to-amorphous transition on ion implantation, the homogeneity of the amorphous layer, the thermal and radiation-structural rearrangements of the ion-implanted layers have been considered. The main results have been obtained by esr and reflection electron diffraction techniques.

 

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