We report the fabrication of high quality Ga0.8In0.2As/GaAs/Ga0.51In0.49P multiple quantum well laser emitting at 0.98 &mgr;m grown by low pressure metalorganic chemical vapor deposition. Continuous wave operation with output power of 500 mW per facet was achieved at room temperature for a broad area laser with 130 &mgr;m width and 300 &mgr;m cavity length. This is an unusually high value of output power for this wavelength laser in this material system. The differential quantum efficiency exceeded 75% with excellent homogeneity and uniformity. The characteristic temperature,T0was in the range of 120–130 K.