Zn diffusion in InP: Effect of substrate dopant concentration
作者:
H. B. Serreze,
H. S. Marek,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 49,
issue 4
页码: 210-211
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.97173
出版商: AIP
数据来源: AIP
摘要:
We have performed open‐tube diffusion of Zn inton‐type InP over the temperature range 525–675 °C. For heavily doped InP, the observed diffusion profiles are consistent with an interstitial‐substitutional model where the interstitial Zn is doubly ionized. However, for undoped InP the profiles have a significantly different shape and the diffusion is deeper. Assumption of neutral interstitial Zn is able to account for these two changes. A tentative model is proposed to explain the dependence of the interstitial Zn ionization state on the starting substrate dopant concentration.
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