Controllable drain cut-in voltage with strong negative differential resistance in GaAs/InGaAs real-space transfer heterostructure
作者:
Jan-Shing Su,
Wei-Chou Hsu,
Yu-Shyan Lin,
Wei Lin,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 8
页码: 1002-1004
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118465
出版商: AIP
数据来源: AIP
摘要:
Three-terminal GaAs/InGaAs/GaAs pseudomorphic real-space transfer heterostructure employing graded channel as the emitter layer grown by low-pressure metal-organic chemical-vapor deposition has been fabricated. We observe controllable drain cut-in voltage characteristics with strong negative differential resistance. The largest peak-to-valley current ratio of the proposed device is about 33 000 at room temperature. Moreover, we observe an energy exchange effect between electrons. ©1997 American Institute of Physics.
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