A study of the production and removal of radiation defects in Ge using secondary electron emission
作者:
G. Holmén,
P. Högberg,
期刊:
Radiation Effects
(Taylor Available online 1972)
卷期:
Volume 12,
issue 1-2
页码: 77-85
ISSN:0033-7579
年代: 1972
DOI:10.1080/00337577208231124
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
The production and removal of radiation defects in Ge (110) single crystals are studied by measuring the variation in the kinetic secondary electron emission yield during bombardment by 40 keV Ge ions. A strong dose rate effect has been found in the temperature dependence of the defect production. An activation energy of 1.44 eV has been calculated for the defect which plays an important role in the removal of damage in Ge.
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