Radiation damage in ReSi2by a MeV4He beam
作者:
G. Bai,
M‐A. Nicolet,
John E. Mahan,
Kent M. Geib,
Gary Y. Robinson,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 57,
issue 16
页码: 1657-1659
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.104134
出版商: AIP
数据来源: AIP
摘要:
Epitaxial ReSi2thin films grown on Si (100) substrates were analyzed at room temperature by MeV 4He backscattering and channeling spectrometry. The minimum yield of [100] axial channeling increases with increasing exposure of the ReSi2sample to the analyzing He beam. This means that ReSi2suffers irradiation damage induced by a MeV 4He beam. The damage in the film induced by a beam incident along a random direction is about one order of magnitude larger than that induced by a beam with an aligned incidence, indicating that the damage is mainly generated by elastic collisions of nuclei. The experimentally measured defect concentration produced at 300 K by a beam of random incidence is compared with the theoretically estimated one produced at 0 K in an amorphous target. The agreement is fairly good, suggesting that the defects are stable at room temperature.
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