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Detection of parasitic potential wells or barriers in bulk-transport charge-coupled devices

 

作者: M.Kleefstra,   P.C.Heuwekemeijer,  

 

期刊: IEE Journal on Solid-State and Electron Devices  （IET Available online 1977）
卷期: Volume 1, issue 2  

页码: 46-48

 

年代: 1977

 

DOI:10.1049/ij-ssed.1977.0002

 

出版商: IEE

 

数据来源: IET

 

摘要:

For bulk c.c.d.s, the depth of the potential well is obtained by measuring the differential conductance perpendicular to the c.c.d. transfer direction. A test field-effect device, the measuring method and the circuitry are presented. An example shows the ability of the method to detect parasitic potential wells in the transfer direction.

 

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