Micro-Raman characterization of the electronic properties of Si-doped GaAs layers grown on patterned substrates
作者:
J. Gerster,
J. M. Schneider,
C. Ehret,
W. Limmer,
R. Sauer,
H. Heinecke,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 1
页码: 69-71
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119309
出版商: AIP
数据来源: AIP
摘要:
The coupled modes of plasmons and LO phonons appearing in the Raman spectra of highly doped GaAs layers have been investigated in order to study the local incorporation character of Si on different crystal facets. The Si-doped GaAs layers were grown by molecular beam epitaxy on patterned GaAs (100) substrates with etched ridges forming (111)A and (111)B facets with a lateral extension of a few micrometers. The local type and concentration of free charge carriers have been determined from an analysis of the coupled-mode Raman spectra. It is shown that Si acts as a donor in the material grown on the (111)B facets and as an acceptor in the material grown on the (111)A facets. ©1997 American Institute of Physics.
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