High dielectric constant material Ba0·6Sr0·4TiO3(BST) was heteroepitaxially grown over YBa2Cu3O7-x(YBCO) on Lanthanum aluminate (LaAlO3) substrates. The electrical characteristics of the BST film was studied by depositing electron beam evaporated platinum (Pt). The capacitancevoltage (C-V) measurements at various temperatures up to 100°C show negative temperature coefficient for capacitance, confirming the paraelectric phase. The capacitance vs voltage and current vs voltage characteristics show asymmetry with the polarity of the applied voltage. The asymmetry in the capacitance and current-voltage characteristics can be explained by defect chemistry model of electrode/oxide interface.