作者: Z. Shi,
期刊: Applied Physics Letters (AIP Available online 1998) 卷期: Volume 72, issue 11
页码: 1272-1274
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121048
出版商: AIP
数据来源: AIP
摘要:
A GaSb/PbSe/GaSb double heterojunction laser structure is proposed. The advantages and feasibility of fabricating such lasers are discussed. Theoretical calculations show that the threshold gain for GaSb/PbSe lasers is much smaller than for traditional PbEuSe/PbSe lasers. Electrical confinement and heat dissipation is also significantly improved. The resulting much lower threshold currents and temperature difference between the active layer and heat sink should allow GaSb/PbSe lasers to operate in continuous wave mode above room temperature. ©1998 American Institute of Physics.
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