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Selective dry etching of oxide films for spacer applications in a high density plasma

 

作者: Lynn R. Allen,   Victoria Yu‐Wang,   Masyuki Sato,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1996）
卷期: Volume 14, issue 6  

页码: 3470-3472

 

ISSN:1071-1023

 

年代: 1996

 

DOI:10.1116/1.588782

 

出版商: American Vacuum Society

 

关键词: SiO2;Si

 

数据来源: AIP

 

摘要:

The use of a high density plasma to etch oxide side wall spacers was investigated. Process trends and the optimum process conditions required were determined. Oxide and polysilicon etch rates, uniformities, and the selectivity of oxide to polysilicon were all measured. The resulting etch chemistry had an oxide etch rate of 350 nm/min with a selectivity of oxide to polysilicon of 30:1.

 

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