Dependence of growth rate of quartz in fused silica on pressure and impurity content
作者:
V. J. Fratello,
J. F. Hays,
D. Turnbull,
期刊:
Journal of Applied Physics
(AIP Available online 1980)
卷期:
Volume 51,
issue 9
页码: 4718-4728
ISSN:0021-8979
年代: 1980
DOI:10.1063/1.328346
出版商: AIP
数据来源: AIP
摘要:
We have measured the effects of pressure, temperature, and some variations in impurity content on the growth rateuof quartz into fused silica. Under all conditions the growth rate was interface controlled and increased exponentially with pressure with an activation volume averaging −21.2 cm3/mole. The activation enthalpy for all specimens extrapolated to a zero pressure value of 64 kcal/mole, within the experimental uncertainty. At a given stoichiometry the effect of hydroxyl content on growth rate is described entirely by a linear termCOHin the prefactor of the equation for the growth rate. The effect of chlorine impurity can be described similarly. Alsouis increased as the ideal stoichiometry is approached from the partially reduced state.
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