High‐quality GaAs on sawtooth‐patterned Si substrates
作者:
K. Ismail,
F. Legoues,
N. H. Karam,
J. Carter,
Henry I. Smith,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 19
页码: 2418-2420
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.106034
出版商: AIP
数据来源: AIP
摘要:
We report a novel technique for growing GaAs on Si substrates with a low density of threading dislocations. The process involves patterning a 200 nm period sawtooth grating on (100) Si using a combination of holographic lithography and wet chemical etching. The GaAs layers grown by metalorganic chemical vapor deposition on such substrates exhibit a dramatic reduction in the density of threading misfit dislocations, even when the grown layers are thin. Twins and stacking faults are also reduced dramatically by eitherinsituthermal‐cycle growth orexsiturapid thermal annealing.
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