An AlxGa1−xAsp‐njunction light emitting diode, with athinIn2O3current spreading layer, on the top side, and anindirectband‐gapAlAs‐Al0.6Ga0.4As distributed Bragg reflector, on the bottom side, has been fabricated and characterized under continuous‐wave, room‐temperature operation. These relatively simple modifications yield a 15‐fold increase in electrical‐to‐optical power conversion efficiency at &lgr;∼675 nm, and a significant reduction in active region heating—in comparison with standard devices prepared and tested as controls. ©1995 American Institute of Physics.