We report on the identification of the CuGaacceptor level as a recombination center in GaAs. Using time‐resolved photoluminescence (PL) we have studied the recombination of excess charge carriers in metalorganic vapor‐phase epitaxy GaAs/AlGaAs double heterostructures. The recombination in one particular set of samples was clearly nonradiative and the trap level derived from our measurements coincides with that of CuGaas seen in the PL spectra. The temperature dependence of the capture coefficients is consistent with a multiphonon process and allows for the determination of the coupling strength for electron and hole capture.