Short‐wavelength stimulated emission from a GaInP/AlGaInP double‐heterostructure (DH) grown on GaAs0.6P0.4substrates, where lattice‐matched Ga0.7In0.3P is the active layer with &Ggr; band‐gap energy beyond 2.1 eV is investigated. Laser oscillation is attained at a wavelength below 590 nm. This shows that the DH attains sufficient carrier confinement for lasing even though the minimum &Ggr; band‐gap energy is close to that in theXband. By applying high‐reflectivity coating on both facets of the cavity to decrease the optical mirror loss, we achieve lasing operation by the DH devices under pulsed current injection up to 200 K. The device exhibits threshold currents of 115 mA at 77 K and 380 mA at 200 K, and an output power level up to 0.3 mW. The oscillation wavelength is 577 nm at 77 K and 588 nm at 200 K when the current is injected at 1.2 times the threshold. ©1995 American Institute of Physics.