Open‐tube isothermal vapor phase epitaxy of Hg1−xCdxTe on CdTe
作者:
S. H. Shin,
J. G. Pasko,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 44,
issue 4
页码: 423-425
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.94796
出版商: AIP
数据来源: AIP
摘要:
Device‐quality Hg1−xCdxTe (0.2≤x≤0.35) epitaxial layers have been grown on CdTe substrates by open‐tube isothermal vapor phase epitaxy (ISOVPE). The surface morphology of the layers is mirrorlike, and the Hall data are comparable to those for HgCdTe grown by liquid phase epitaxy (LPE). Photovoltaic devices with a cutoff wavelength of 4.1 &mgr;m at 77 K were fabricated on an ISOVPE HgCdTe epilayer. Their performance is comparable with those that we have obtained for such devices fabricated on LPE HgCdTe epilayers.
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