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Dependence of the transport properties ofn‐type Ge at 20 K on impurity concentration

 

作者: Ronaldo S. de Biasi,  

 

期刊: Journal of Applied Physics  (AIP Available online 1973)
卷期: Volume 44, issue 1  

页码: 357-359

 

ISSN:0021-8979

 

年代: 1973

 

DOI:10.1063/1.1661887

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Transport properties ofn‐type germanium at 20 K have been calculated in the donor impurity range 1011–1014cm−3, for a constant electric field in the [111] direction. The mathematical treatment is based on Boltzmann's equation, taking account of acoustic phonon scattering and impurity scattering between the different valleys. The electron distribution function in each valley is approximated by a drifted Maxwellian. It is found that the threshold field for the onset of negative differential conductivity increases with increasing impurity concentration and the peak‐to‐valley ratio decreases significantly. The negative differential conductivity region ceases to exist for impurity concentrations larger than 4.5×1013cm−3.

 

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