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Critical influence of reactant pressure on the evolution of single phase CuInSe2during selenization at low temperatures

 

作者: S. T. Lakshmikumar,   A. C. Rastogi,  

 

期刊: Applied Physics Letters  (AIP Available online 1995)
卷期: Volume 66, issue 23  

页码: 3128-3130

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.113626

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Single phase chalcopyrite CuInSe2(CIS) phase formation at low temperatures (≊260 °C) is demonstrated by Se vapor selenization of evaporated metal precursors at a pressure of ≊0.3 mbar. The low pressure changes the relative kinetics of selenization of Cu and In due to the modification of the availability of Se reacting species. Consequently, the thermodynamically favorable reaction CuSe+In(1)+Se→CIS proceeds to completion at lower temperatures. This is confirmed by the absence of In2Se3at intermediate pressures (0.5–1.0 mbar). At higher pressures (≊7–10 mbar) and Se flux, simultaneous formation of the equilibrium binaries, CuSe and In2Se3at low temperatures, leads to the formation of CIS through a diffusion limited reaction of the binaries at higher (≥400 °C) temperatures. ©1995 American Institute of Physics.

 

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