Epitaxy of III–V diluted magnetic semiconductor materials
作者:
H. Munekata,
H. Ohno,
S. von Molnar,
Alex Harwit,
Armin Segmüller,
L. L. Chang,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1990)
卷期:
Volume 8,
issue 2
页码: 176-180
ISSN:0734-211X
年代: 1990
DOI:10.1116/1.584849
出版商: American Vacuum Society
关键词: INDIUM ARSENIDES;MANGANESE ARSENIDES;MOLECULAR BEAM EPITAXY;OPTICAL PROPERTIES;HALL EFFECT;MAGNETIZATION;TEMPERATURE DEPENDENCE;(In,Mn)As;InAs;(Ga,Mn)As;GaAs
数据来源: AIP
摘要:
A new class of III–V based diluted magnetic semiconductors, specifically In1−xMnxAs (x≲0.2) and InAs/InMnAs multilayer structures, has been prepared by molecular beam epitaxy. The x‐ray diffraction measurements reveal that the incorporation of Mn can be predominantly either homogeneous (200 °C) or inhomogeneous (300 °C), depending on the growth temperature. Semiconducting properties of the films have been examined by optical absorption and Hall effect measurements, and it has been found the films of homogeneous alloy aren‐type and have a band gap which decreases with increasing Mn composition. Magnetization measurements indicate that the homogeneous alloy exhibits paramagnetic behavior, whereas ferromagnetic behavior dominates for the inhomogeneous case. The growth of GaMnAs has also been examined.
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