Three‐dimensional analysis of a microstructure by submicron secondary ion mass spectrometry
作者:
H. Satoh,
M. Owari,
Y. Nihei,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1991)
卷期:
Volume 9,
issue 5
页码: 2638-2641
ISSN:1071-1023
年代: 1991
DOI:10.1116/1.585662
出版商: American Vacuum Society
关键词: SIMS;ION BEAMS;GALLIUM IONS;MICROSTRUCTURE;SPATIAL RESOLUTION;MULTILAYERS;ZINC OXIDES;STRONTIUM SULFIDES;CERIUM ADDITIONS;ALUMINIUM ADDITIONS;ZnO:Al;SrS:Ce
数据来源: AIP
摘要:
By utilizing the sharpness of a focused ion beam, lateral resolution of SIMS analysis has been improved by one or two orders of magnitude. The authors constructed the submicron SIMS by using a gallium focused ion beam. On the other hand, a focused ion beam is frequently used as a tool for micromachining due to its high current density and sharpness.Insitucombination of micromachining and high spatial resolution analysis brings a new field of microbeam analysis on materials. In the development of thin‐film multilayer devices or large scale integrated circuits, three‐dimensional analysis of local microstructure has a great importance. In order to determine location and composition of a specific subsurface microstructure, a focused ion beam is used as (1) a machining tool to expose a vertical cross section on which the center of the specific microstructure lays, and (2) a primary beam of SIMS element mapping. Through the analysis of a buried fine particle, the submicron SIMS is shown to be a powerful tool for three‐dimensional analysis of a microstructure.
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