It is shown that photoluminescent and electroluminescent decay times are equal in a wide variety of red‐emitting GaP diodes grown by liquid‐phase epitaxy. In general, the luminescent decay times depend strongly on the Zn concentration in the bulkpregion. For high Zn concentrations (≥5×1017cm−3) the decay times vary approximately inversely with Zn concentration. The equality of the photoluminescent and electroluminescent decay times for the wide variation of decay times and Zn concentrations provides additional evidence that the luminescence occurs in the bulk Zn‐ and O‐dopedpregion.