Effect of molecular weight on poly(methyl methacrylate) resolution
作者:
Maroun Khoury,
David K. Ferry,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1996)
卷期:
Volume 14,
issue 1
页码: 75-79
ISSN:1071-1023
年代: 1996
DOI:10.1116/1.588437
出版商: American Vacuum Society
关键词: LITHOGRAPHY;ELECTRON BEAMS;PMMA;MOLECULAR WEIGHT;SPATIAL RESOLUTION;ELECTRON COLLISIONS;BACKSCATTERING;PROXIMITY EFFECT;PMMA
数据来源: AIP
摘要:
Electron‐beam lithography’s resolution limit is greater than the beam diameter due to resist limitations as well as electron interaction with solids. We examine the effect of molecular weight on the resolution of poly(methyl methacrylate) (PMMA). The experimental procedure uses thin Si3N4in order to reduce the backscattered electron contribution to the exposure, and the resist contrast standard deviation σ was determined. Molecular weights of 950×103, 120×103, and 15×103amu were used. It is found that relatively equivalent exposure and resolution are found in each case, and that the entanglement threshold is either lower than thought, or is not a factor in the resolution of PMMA. Lines as small as 7 nm are found in the highest molecular weight.
点击下载:
PDF
(516KB)
返 回