Traditional electrical doping profile extraction techniques fail for ultra‐shallow metal–oxide–semiconductor (MOS) doping profiles due to simplifications in the physical models or limitations in the analytical formulas. A method to overcome these problems is presented, based on the numerical extraction of doping profiles from capacitance–voltage (C–V) measurements without limiting approximations. The following steps are involved: measurement of the high and low frequencyC–Vcharacteristics of a MOS test structure; definition of an initial parametrized representation of the doping profile using analytical basis functions; determination of the interface trapped charge from the measuredC–Vcharacteristics; minimization of the difference between the calculatedC–Vcharacteristic, computed from the full one‐dimensional solution of Poisson’s equation, and the measuredC–Vcharacteristic, by optimizing the doping profile parameters. All computations are performed on an engineering workstation which can also control theC–Vmeasurements and data acquisition. The method is demonstrated for MOS structures with known doping profiles, interface trap densities, and measurement noise. Uniqueness, resolution, and sensitivity issues of the extracted doping profiles are also discussed.