Absorption inp‐Si1−xGexquantum well detectors
作者:
D. J. Robbins,
M. B. Stanaway,
W. Y. Leong,
R. T. Carline,
N. T. Gordon,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 12
页码: 1512-1514
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113630
出版商: AIP
数据来源: AIP
摘要:
The normal incidence absorption between 2 and 14 &mgr;m in a pseudomorphicp‐Si0.81Ge0.19/Si multiple quantum well sample with doping 5×1012cm−2per well is described by a Drude conductivity characteristic of free carriers, with an in‐plane mobility of 32 cm2/V s and a relaxation time of 5.5 fs at 77 K. When the absorption is scaled with dopant concentration these parameters predict quantum efficiencies for quantum well infrared photodetectors in reasonable agreement with experiment.
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