Characterization of photoluminescence intensity and efficiency of free excitons in semiconductor quantum well structures
作者:
Shirong Jin,
Yanlan Zheng,
Aizhen Li,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 8
页码: 3870-3873
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365689
出版商: AIP
数据来源: AIP
摘要:
The photoluminescence (PL) intensity of free excitons in a GaInAsSb/GaAlAsSb single quantum well structure is investigated as a function of excitation intensity and lattice temperature. The relationship between PL intensity of free excitons and excitation intensity as well as lattice temperature was developed for the quantitative descriptions of the experimental data. ©1997 American Institute of Physics.
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