Advancing metal–oxide–semiconductor theory: Steady-state nonequilibrium conditions
作者:
M. Passlack,
M. Hong,
E. F. Schubert,
G. J. Zydzik,
J. P. Mannaerts,
W. S. Hobson,
T. D. Harris,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 11
页码: 7647-7661
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365343
出版商: AIP
数据来源: AIP
摘要:
This article investigates steady-state nonequilibrium conditions in metal–oxide–semiconductor (MOS) capacitors. Steady-state nonequilibrium conditions are of significant interest due to the advent of wide-gap semiconductors in the arena of MOS (or metal–insulator–semiconductor) devicesanddue to the scaling of oxide thickness in Si technology. Two major classes of steady-state nonequilibrium conditions were studied both experimentally and theoretically: (i) steady-state deep depletion and (ii) steady-state low level optical generation. It is found that the identification and subsequent understanding of steady-state nonequilibrium conditions is of significant importance for correct interpretation of electrical measurements such as capacitance–voltage and conductance–voltage measurements. Basic implications of steady-state nonequilibrium conditions were derived for both MOS capacitors with low interfaces state densityDitand for oxide semiconductor interfaces with a pinned Fermi level. Further, a photoluminescence power spectroscopy technique is investigated as a complementary tool for direct-gap semiconductors to studyDitand to monitor the interface quality during device fabrication. ©1997 American Institute of Physics.
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