The properties of chalcogenide glass semiconductors of Bi29Tl35Se36is investigated by the electrical conductivity, thermoelectric power and thermal conductivity as a function of temperature from room temperature to near 500°C. The experimental data of the electrical conductivity and thermoelectric power are analyzed in terms of a model developed from the density of states and electrical transport in solid amorphous semiconductors[1]. The activation energy calculated from electrical conductivity data is found to be 0.11 eV for the solid and 0.66 eV for the liquid. Moreover, the coefficient of the linear decrease of energy gap with temperature was found to be γ=10.37 ×10−4eV/K°.