We report the first fabrication of a monolithic integrated circuit consisting of a Ga0.47In0.53As planar photoconductive detector (suitable for 1.3–1.55 &mgr;m wavelength optical communication systems) associated with a GaAs field‐effect transistor. The gain, response times, and noise properties of the photoconductive detector and the integrated photoreceiver have been investigated, taking into account particular aspects of the material and integrated circuit structure.