Gas-phase doping of silicon
作者:
J.Goorissen,
A.M.J.G.Van Run,
期刊:
Proceedings of the IEE - Part B: Electronic and Communication Engineering
(IET Available online 1959)
卷期:
Volume 106,
issue 17S
页码: 858-860
年代: 1959
DOI:10.1049/pi-b-2.1959.0159
出版商: IEE
数据来源: IET
摘要:
Single crystals of silicon doped with phosphorus and with a constant resistivity are prepared using a gas-phase doping technique. A constant flux of phosphorus atoms from the gas phase via the liquid into the solid is created by decomposing phosphine in the vicinity of the floating liquid zone.Experimental details and a discussion of the results obtained with phosphine are given.
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