On the sputtering of binary compounds
作者:
P. K. Haff,
Z. E. Switkowski,
期刊:
Applied Physics Letters
(AIP Available online 1976)
卷期:
Volume 29,
issue 9
页码: 549-551
ISSN:0003-6951
年代: 1976
DOI:10.1063/1.89180
出版商: AIP
数据来源: AIP
摘要:
A simple physical model is presented to describe some aspects of the sputtering of compound targets. In particular, expressions are developed for the partial sputtering yields for binary systems in terms of the elemental sputtering rates, the stoichiometric concentrations, and surface binding energy. The partial yields depend nonlinearly on the bulk target concentrations. Comparison of the theoretical predictions with the data on sputtering of PtSi, NiSi, and Cu3Au indicates that the general features are well described.
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