Investigation of Thermal Stresses in Silicon by Source Image Distortion
作者:
Gene J. Carron,
L. K. Walford,
James A. Schoeffel,
期刊:
Journal of Applied Physics
(AIP Available online 1969)
卷期:
Volume 40,
issue 6
页码: 2372-2375
ISSN:0021-8979
年代: 1969
DOI:10.1063/1.1657996
出版商: AIP
数据来源: AIP
摘要:
The source image distortion (SID) technique has been used to measure the stresses produced by electron beam melting of small regions of single‐crystal silicon wafers. Stress values thus calculated (∼108Nm−2) agree with other worker's results for stress levels close to the fracture point for single‐crystal silicon. For wafers which had fractured, no source image distortion was visible indicating the absence of stress in those wafers.
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