Positron annihilation study of low pressure chemical vapor deposited silicon nitride films
作者:
R. A. Hakvoort,
H. Schut,
A. van Veen,
W. M. Arnold Bik,
F. H. P. M. Habraken,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 59,
issue 14
页码: 1687-1689
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.106218
出版商: AIP
数据来源: AIP
摘要:
DopplerS‐parameter measurements have been performed on low‐pressure chemical vapor deposited (LPCVD) Si3N4samples. Annealing of the samples at 1000 °C for times up to 1 h resulted in a decrease of both theSparameter and the positron diffusion length of the silicon nitride. The diffusion length recovers after reimplantation of deuterium, but theSparameter remains low. The data are discussed using a model also applied to understand some electrical properties of the LPCVD nitride.
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