We report on a detailed study of the influence of TiSi2silicidation on the formation of the quenched‐in defects usually created by rapid thermal processing (RTP). It is shown that TiSi2growth during RTP leads to a total removal of the defects, whereas the presence of TiSi2by itself (without growth) has no influence. It is concluded that the defect removal is caused by the strong vacancy injection induced by the silicide growth.