Hot-carrier-induced modifications to the noise performance of polycrystalline silicon thin-film transistors
作者:
S. Giovannini,
R. Carluccio,
L. Mariucci,
A. Pecora,
G. Fortunato,
C. Reita,
F. Plais,
D. Pribat,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 9
页码: 1216-1218
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119855
出版商: AIP
数据来源: AIP
摘要:
Modifications of noise performances induced by hot-carrier degradation in polycrystalline silicon thin-film transistors, made by excimer laser crystallization, are presented. In particular, the normalized drain current spectral density of these devices shows an evident1/fbehavior, and as the device characteristics are degraded by prolonged bias stressing, the noise performances worsen. Hot-carrier degradation results in the formation of both interface states, that have been evaluated through the analysis of the sheet conductance, as well as of oxide traps near the insulator/semiconductor interface, as evidenced by the1/fnoise measurements. A strong correlation between interface state and oxide trap densities has been found, suggesting a common origin for the generation mechanism of the two types of defects. ©1997 American Institute of Physics.
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