A new expression of the transverse acoustoelectric voltage (TAV) is obtained for semiconductors including both majority and minority carriers. Numerical results are given and compared for LiNbO3/Si and LiNbO3/GaAs structures. It is shown that the influence of the minority carriers is restricted to quasi‐intrinsic semiconductors. The change in sign of the TAV for low conductivities and low frequencies, previously predicted for extrinsic semiconductors, is confirmed.