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Properties of CdZnTe crystals grown by a high pressure Bridgman method

 

作者: F. P. Doty,   J. F. Butler,   J. F. Schetzina,   K. A. Bowers,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1992）
卷期: Volume 10, issue 4  

页码: 1418-1422

 

ISSN:1071-1023

 

年代: 1992

 

DOI:10.1116/1.586264

 

出版商: American Vacuum Society

 

关键词: CADMIUM TELLURIDES;ZINC TELLURIDES;GAMMA DETECTION;WAFERS;ELECTRIC CONDUCTIVITY;PHOTOLUMINESCENCE;BRIDGMAN METHOD;CRYSTAL GROWTH FROM MELTS;TERNARY COMPOUNDS;(Cd,Zn)Te

 

数据来源: AIP

 

摘要:

CdZnTe crystals have been grown over the full range of alloy composition by a high‐pressure Bridgman (HPB) method. Use of the inert gas over pressure reduces loss of material from the melt, and permits growth without the use of sealed ampoules, extending the range of possible alloys, and allowing a choice of crucible materials. The HPB method yields high‐quality CdZnTe and enables room‐temperature gamma radiation detectors to be made over large area wafers of undoped material for the first time.

 

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