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Two‐carrier model for high field conduction in SiO2

 

作者: J. J. O'Dwyer,  

 

期刊: Journal of Applied Physics  (AIP Available online 1973)
卷期: Volume 44, issue 12  

页码: 5438-5440

 

ISSN:0021-8979

 

年代: 1973

 

DOI:10.1063/1.1662171

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The current mean field strength characteristics are calculated for a special model of an insulator in which low‐mobility holes are thermionically emitted from the anode and high‐mobility electrons are cold emitted from the cathode. In the general case, the conduction characteristics are both thickness and temperature dependent.

 

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