Sensitization of the minority carrier lifetime in hydrogenated amorphous silicon
作者:
R. Rapaport,
Y. Lubianiker,
I. Balberg,
L. Fonseca,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 1
页码: 103-105
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.120658
出版商: AIP
数据来源: AIP
摘要:
While sensitization of the photoconductivity, i.e., the increase of the majority carrier lifetime by the addition of recombination centers, is known for many years, there was no evidence or suggestion for the corresponding sensitization of the minority carrier lifetime. In this letter, we present experimental evidence for the existence of such an effect in device quality undoped hydrogenated amorphous silicon films. We propose possible scenarios that can yield the observed effect and mention the possible benefits of the minority carrier sensitization for the improvement of bipolar optoelectronic devices made of this material. ©1998 American Institute of Physics.
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