Electroluminescence from a heterojunction bipolar transistor
作者:
J. R. Hayes,
R. F. Leheny,
H. Temkin,
A. C. Gossard,
W. Wiegmann,
期刊:
Applied Physics Letters
(AIP Available online 1984)
卷期:
Volume 45,
issue 5
页码: 537-539
ISSN:0003-6951
年代: 1984
DOI:10.1063/1.95306
出版商: AIP
数据来源: AIP
摘要:
Electroluminescence has been observed from a GaAlAs/GaAs heterojunction bipolar transistor. The absence of luminescence from the GaAlAs emitter confirms that compositional grading significantly enhances hole confinement. In addition, it is suggested that electroluminescence occurring from the radiative recombination of excess electrons in the base may cause significant cross talk between devices of an integrated circuit.
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