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Air as an adjustable insulator forC‐VandG‐Vanalysis of semiconductor surfaces

 

作者: John Moreland,   Jeff Drucker,   P. K. Hansma,   Jo¨rg P. Kotthaus,   Arnold Adams,   R. Kvaas,  

 

期刊: Applied Physics Letters  （AIP Available online 1984）
卷期: Volume 45, issue 1  

页码: 104-106

 

ISSN:0003-6951

 

年代: 1984

 

DOI:10.1063/1.95003

 

出版商: AIP

 

数据来源: AIP

 

摘要:

An adjustable metal‐air‐semiconductor capacitor was fabricated using a Pb disk suspended 1700–3600 A˚ above ann‐type Si ⟨111⟩ surface. Experimental differential capacitance versus voltage and differential conductance versus voltage curves are similar to those previously obtained for metal‐oxide‐semiconductor capacitors.

 

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